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| S595T / S595TR / S595TRW Vishay Semiconductors MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments MOSMIC - MOS Monolithic Integrated Circuit SOT-143 Features * * * * * * * * * Integrated gate protection diodes Low noise figure e3 High gain Biasing network on chip Improved cross modulation at gain reduction High AGC-range SMD package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 4 2 SOT-143R 4 1 3 2 SOT-343R 4 3 19216 Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. RFC VDD(VDS) G2 G1 C block S D RF out RF in C block 94 9296 Mechanical Data Typ: S595T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S595TR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S595TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 C block AGC Parts Table Part S595T S595TR S595TRW 595 59R W59 Marking SOT-143 SOT-143R SOT-343R Package Document Number 85049 Rev. 1.6, 02-May-05 www.vishay.com 1 S595T / S595TR / S595TRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM VG1/G2SM Ptot TCh Tstg Value 8 30 10 6 200 150 - 55 to + 150 Unit V mA mA V mW C C Maximum Thermal Resistance Parameter Channel ambient 1) 1) Test condition Symbol RthChA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition Symbol Min 7 7 Typ. Max 10 10 50 100 20 50 9 13 1.0 500 18 Unit V V A A nA A mA V IG1S = 10 mA, VG2S = VDS = 0 V(BR)G1SS IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS + IG1SS - IG1SS IG2SS IDSS IDSP VG2S(OFF) Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 - VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain current Self-biased operating current Gate 2 - source cut-off voltage VDS = 5 V, VG1S = 0, VG2S = 4 V VDS = 5 V, VG1S = nc, VG2S = 4 V VDS = 5 V, VG1S = nc, ID = 20 A Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 k collector resistor. Electrical AC Characteristics Tamb = 25 C, unless otherwise specified VDS = 5 V, VG2S = 4 V, ID= IDSP , f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz Test condition Symbol |y21s| Cissg1 Crss Coss Gps Gps 17 Min 28 Typ. 30 2.3 25 1.1 28 20 Max 35 2.7 Unit mS pF fF pF dB dB www.vishay.com 2 Document Number 85049 Rev. 1.6, 02-May-05 S595T / S595TR / S595TRW Vishay Semiconductors Parameter AGC range Noise figure Test condition VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3.3 mS, GL = 1 mS, f = 800 MHz Symbol Gps F F Min 45 1 1.3 Typ. Max Unit dB dB dB Common Emitter S-Parameters f/MHz LOG MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 -0.01 -0.03 -0.11 -0.19 -0.28 -0.40 -0.51 -0.64 -0.78 -0.93 -1.07 -1.22 -1.36 -1.49 -1.65 -1.79 -1.94 -2.04 -2.17 -2.29 -2.42 -2.58 -2.70 -2.78 -2.89 -3.00 S11 ANG deg -4.6 -9.2 -13.8 -18.1 -22.6 -26.8 -31.1 -35.2 -39.3 -43.2 -47.1 -50.8 -54.4 -58.2 -61.5 -65.2 -68.6 -72.0 -75.3 -78.7 -82.2 -85.2 -88.4 -91.6 -94.8 -97.7 9.61 9.56 9.44 9.30 9.15 9.00 8.79 8.62 8.35 8.17 7.94 7.71 7.50 7.26 7.08 6.86 6.68 6.44 6.27 6.09 5.93 5.67 5.55 5.41 5.38 5.17 LOG MAG S21 ANG deg 174.3 167.9 161.3 155.1 148.4 142.7 136.8 130.7 125.3 119.7 114.2 108.7 104.1 99.1 94.1 89.2 84.5 79.3 74.4 70.4 65.8 61.1 56.1 51.8 47.1 42.0 -63.13 -56.88 -53.46 -51.38 -49.76 -48.70 -47.92 -47.45 -47.23 -47.10 -47.22 -46.92 -46.68 -46.47 -46.45 -45.89 -44.77 -43.51 -41.91 -40.66 -39.81 -38.89 -37.91 -36.76 -35.65 -34.63 LOG MAG S12 ANG deg 88.0 85.3 82.8 80.7 78.3 77.3 76.4 76.2 76.7 78.4 82.3 88.6 92.6 98.8 107.2 116.7 125.9 133.0 137.1 138.5 140.6 143.6 145.8 148.3 149.7 150.1 -0.08 -0.10 -0.14 -0.16 -0.22 -0.26 -0.30 -0.38 -0.43 -0.49 -0.55 -0.60 -0.66 -0.70 -0.73 -0.78 -0.80 -0.85 -0.87 -0.89 -0.90 -0.92 -0.93 -0.94 -0.93 -0.92 LOG MAG S22 ANG deg -2.1 -4.3 -6.4 -8.6 -11.0 -12.9 -15.1 -17.1 -18.8 -20.6 -22.6 -24.6 -26.1 -27.9 -29.8 -31.7 -33.4 -35.4 -37.2 -39.1 -41.1 -42.6 -44.6 -46.7 -49.1 -51.0 Document Number 85049 Rev. 1.6, 02-May-05 www.vishay.com 3 S595T / S595TR / S595TRW Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) P - Total Power Dissipation ( mW ) tot y21s - Forward Transadmittance ( mS ) 250 40 VDS=5V f=200MHz 30 200 150 20 100 50 0 0 25 50 75 100 125 150 10 0 0 95 11159 1 2 3 4 95 10759 Tamb - AmbientTemperature ( C ) VG2S - Gate 2 Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage 20 Cissg1 - Gate 1 Input Capacitance ( pF ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 V G2S - Gate 2 Source Voltage ( V ) V DS = 5 V f = 200 MHz ID - Drain Current ( mA ) 16 VG2S=4V 12 3V 8 2V 4 0 0 1 2 3 4 1.5V 1V 5 VDS - Drain Source Voltage ( V ) 95 11157 13634 Figure 2. Drain Current vs. Drain Source Voltage Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage 20 Coss - Output Capacitance ( pF ) VDS=5V ID - Drain Current ( mA ) 2.0 V DS = 4 V f = 200 MHz 1.5 16 12 1.0 8 4 0 0 1 2 3 4 0.5 0.0 3 13635 4 5 6 7 95 11158 VG2S - Gate 2 Source Voltage ( V ) V DS - Drain Source Voltage ( V ) Figure 3. Drain Current vs. Gate 2 Source Voltage Figure 6. Output Capacitance vs. Drain Source Voltage www.vishay.com 4 Document Number 85049 Rev. 1.6, 02-May-05 S595T / S595TR / S595TRW Vishay Semiconductors 20 - Transducer Gain ( dB ) 10 0 -10 -20 -30 -40 -50 V DS = 5 V f = 800 MHz S 21 2 -60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 13636 V G2S - Gate 2 Source Voltage ( V ) Figure 7. Transducer Gain vs. Gate 2 Source Voltage 80 CM - Cross Modulation ( dB ) 70 60 50 40 30 20 10 V DS = 5 V f = 800 MHz Pin = -20 dBm 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 13637 V G2S - Gate 2 Source Voltage ( V ) Figure 8. Cross Modulation vs. Gate 2 Source Voltage Document Number 85049 Rev. 1.6, 02-May-05 www.vishay.com 5 S595T / S595TR / S595TRW Vishay Semiconductors VDS = 10 V, ID = 10 mA, Z0 = 50 S11 j j0.5 S12 90 120 j2 1300 MHz j0.2 j5 1050 60 30 800 550 300 50 0.008 0.016 0 0 0.2 0.5 1 2 5 50 i 180 -j0.2 1300 MHz 1050 800 -j0.5 12 944 300 550 -j2 -j5 -150 -30 -60 -120 -j 12 945 -90 Figure 9. Input Reflection Coefficient Figure 11. Reverse Transmission Coefficient S21 90 800 S22 j 60 550 300 1050 30 1300 MHz j0.2 j0.5 j2 j5 50 180 1.0 2.0 0 0 0.2 0.5 1 2 -j0.2 -150 -30 -j0.5 -120 12 946 5 50 300 550 -j5 800 1050 -j2 1300 MHz -j -60 -90 12 947 Figure 10. Forward Transmission Coefficient Figure 12. Output Reflection Coefficient www.vishay.com 6 Document Number 85049 Rev. 1.6, 02-May-05 S595T / S595TR / S595TRW Vishay Semiconductors Package Dimensions in mm 96 12239 Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 1.1 (0.043) 0.9 (0.035) 0.9 (0.035) 0.75 (0.029) 0.15 (0.006) 0.08 (0.003) 1.4 (0.055) 1.2 (0.047) 3.0 (0.117) 2.8 (0.109) 0...0.1 (0...0.004) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 1.17 (0.046) ISO Method E 2.0 (0.078) 1.8 (0.070) 96 12240 Document Number 85049 Rev. 1.6, 02-May-05 2.6 (0.101) 2.4 (0.094) www.vishay.com 7 S595T / S595TR / S595TRW Vishay Semiconductors Package Dimensions in mm 96 12238 www.vishay.com 8 Document Number 85049 Rev. 1.6, 02-May-05 S595T / S595TR / S595TRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85049 Rev. 1.6, 02-May-05 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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